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Same model may have multiple batches, images only for reference.
SI7962DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7962DP-T1-E3

Part No SI7962DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 7.1A PPAK SO-8
Datasheet
SI7962DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.1A
Maximum Rds On at Id,Vgs 17 mOhm @ 11.1A, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 70nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 128631-SI7962DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7962DP-T1-E3 CAD Model

Description

The SI7962DP-T1-E3 is a dual N-channel MOSFET from Vishay with a standard feature.

  • Package: PowerPAK SO-8 Dual
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 7.1A
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge @ 10V: 70nC
  • Maximum Rds on @ 11.1A, 10V: 17 mOhm
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Part Number: 128631-SI7962DP-T1-E3

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