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SI8416DB-T2-E1

Part No SI8416DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 4 V
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-Micro Foot™ (1.5x1)
Package / Case 6-UFBGA
Base Product Number SI8416
Other Names SI8416DB-T2-E1,SI8416DB-T2-E1DKR,SI8416DB-T2-E1CT,SI8416DB-T2-E1TR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277583-SI8416DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8416DB-T2-E1 CAD Model

Description

The SI8416DB-T2-E1 is a MOSFET (Metal Oxide) transistor manufactured by Vishay Siliconix.

  • Designed for: use in discrete semiconductor products applications such as Transistors - FETs, MOSFETs - Single
  • Package: tape and reel package
  • Standard package: 3,000
  • Drain to source voltage (Vdss): 8V
  • Continuous drain current (Id): 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
  • Gate charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Input capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
  • Temperature range: -55°C to 150°C (TJ)

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