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Same model may have multiple batches, images only for reference.
SI8429DB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8429DB-T1-E1

Part No SI8429DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 11.7A 2X2 4-MFP
Datasheet
SI8429DB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 26nC @ 5V
Max Input Capacitance 1640pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 028705-SI8429DB-T1-E1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8429DB-T1-E1 CAD Model

Description

The SI8429DB-T1-E1 from Vishay is a P-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage (Max): 8V
  • Continuous Drain Current @ 25°C: 11.7A
  • On-Resistance (Max): 35mOhm @ 4.5V
  • Gate Charge: 26nC @ 5V
  • Package: surface mount package of 4-Microfoot
  • ECCN: EAR99
  • Operating Temperature (Max): 150°C
  • Input Capacitance (Max): 1640pF @ 4V
  • MSL Level: 1 (Unlimited)
  • Popularity: high
  • Supply and Demand: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1829 $50.2067
56+ $1.7911 $100.3016
87+ $1.7351 $150.9537
120+ $1.6792 $201.5040
155+ $1.6232 $251.5960
207+ $1.4553 $301.2471
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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