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Same model may have multiple batches, images only for reference.
SI8465DB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8465DB-T2-E1

Part No SI8465DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8465
Other Names SI8465DB-T2-E1TR,SI8465DBT2E1,SI8465DB-T2-E1CT,SI8465DB-T2-E1DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277575-SI8465DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8465DB-T2-E1 CAD Model

Description

The SI8465DB-T2-E1 is a P-Channel MOSFET transistor.

  • Maximum drain to source voltage: 20 V
  • Continuous drain current: 2.5A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Power dissipation (max): 780mW (Ta), 1.8W (Tc)
  • Gate charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
  • Maximum Vgs: ±12V
  • Package: tape & reel
  • Standard package: 3,000
  • ECCN: EAR99

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