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Same model may have multiple batches, images only for reference.
SI8473EDB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8473EDB-T1-E1

Part No SI8473EDB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI8473EDB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 41mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8473
Other Names SI8473EDB-T1-E1CT,SI8473EDB-T1-E1TR,SI8473EDB-T1-E1DKR,SI8473EDBT1E1
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277547-SI8473EDB-T1-E1
Ultra Librarian 3D Model Ultra Librarian SI8473EDB-T1-E1 CAD Model

Description

The SI8473EDB-T1-E1 is a P-Channel MOSFET that is a part of the TrenchFET® series.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4.5A (Ta)
  • Rds On: 41mOhm @ 1A, 4.5V
  • Vgs(th): 1.5V @ 250µA
  • Power Dissipation: 1.1W (Ta), 2.7W (Tc)
  • Vgs (Max): ±12V
  • Packaging: tape & reel
  • Standard Package: 3,000
  • Mounting Type: SMD (SMT)
  • Package/Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-Microfoot
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • HTSUS: 8541.29.0095
  • Manufacturer: Vishay Siliconix
  • Base Product Number: SI8473
  • Product Status: obsolete

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