The SI8481DB-T1-E1 is a MOSFET (Metal Oxide) transistor that comes in a package with tape and reel.

• Manufacturer: Vishay Siliconix
• Category: Discrete Semiconductor Products
• Specific Category: Transistors - FETs, MOSFETs - Single
• Series: TrenchFET® Gen III
• Type: P-Channel FET
• Standard Package: 3,000
• Mounting: SMD (SMT)
• Drain to Source Voltage (Vdss): 20 V
• Continuous Drain Current (Id) @ 25°C: 9.7A (Tc)
• Maximum Rds On: 21mOhm @ 3A, 4.5V
• Maximum Vgs(th): 900mV @ 250µA
• Power Dissipation (Max): 2.8W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
• Maximum Vgs: ±8V
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095