The Vishay SIA430DJ-T1-GE3 is an N-channel MOSFET electronic component that is designed for discrete semiconductor products.

• Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Temperature Range - operating: -55°C to 150°C (TJ)
• Case/Package: PowerPAK SC-70-6 Single
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current at 25°C: 12A (Tc)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Max Gate Charge: 18nC @ 10V
• Max Input Capacitance: 800pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id,Vgs: 13.5 mOhm @ 7A, 10V