The Vishay SIA431DJ-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and continuous drain current of 12A at 25°C.

• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 12A @ 25°C
• Maximum Rds On: 25 mOhm @ 6.5A, 4.5V
• Maximum Gate-Source Voltage: ±8V
• Gate-Source Threshold Voltage: 850mV @ 250μA
• Maximum Gate Charge: 60nC @ 8V
• Maximum Input Capacitance: 1700pF @ 10V
• Package: PowerPAK SC-70-6 Single
• Power Dissipation: 3.5W (Ta) and 19W (Tc)
• Temperature Range: -55°C to 150°C (TJ)