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SIA436DJ-T1-GE3

Part No SIA436DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 12A SC70-6L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 25.2nC @ 5V
Max Input Capacitance 1508pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 15.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096368-SIA436DJ-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIA436DJ-T1-GE3 CAD Model

Description

The SIA436DJ-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 8V.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 8V
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Maximum Gate Charge: 25.2nC @ 5V
  • Maximum Rds On @ Id,Vgs: 9.4 mOhm @ 15.7A, 4.5V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Ideal For: Discrete semiconductor products applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6970 $52.2750
155+ $0.6529 $101.1995
240+ $0.6309 $151.4160
345+ $0.5868 $202.4460
445+ $0.5647 $251.2915
555+ $0.5427 $301.1985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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