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Same model may have multiple batches, images only for reference.
SIA444DJT-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIA444DJT-T1-GE3

Part No SIA444DJT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A SC-70
Datasheet
SIA444DJT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 560pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 7.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096374-SIA444DJT-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIA444DJT-T1-GE3 CAD Model

Description

Vishay SIA444DJT-T1-GE3 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 12A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A @ 25°C
  • On-Resistance: Low
  • Switching Speed: High
  • Package: PowerPAK SC-70-6 single
  • Maximum Power Dissipation: 3.5W (Ta) and 19W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Applications: Power management, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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