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SIA469DJ-T1-GE3

Part No SIA469DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 15 V
Power Dissipation (Max) 15.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Base Product Number SIA469
Other Names SIA469DJ-T1-GE3CT,SIA469DJ-T1-GE3TR,SIA469DJ-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277674-SIA469DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA469DJ-T1-GE3 CAD Model

Description

The Vishay Siliconix SIA469DJ-T1-GE3 is a P-channel MOSFET transistor that comes in a PowerPAK SC-70-6 package.

  • Series: TrenchFET Gen III
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 12A @ 25°C
  • On-Resistance (Max): 26.5mOhm @ 5A and 10V
  • Gate Charge: 15 nC @ 4.5 V
  • Input Capacitance: 1020 pF @ 15 Vds
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,076 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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