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SIA811DJ-T1-E3

Part No SIA811DJ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13nC @ 8V
Max Input Capacitance 355pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 94 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Dimension PowerPAK SC-70-6 Dual
Win Source Part Number 106774-SIA811DJ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA811DJ-T1-E3 CAD Model

Description

The Vishay 106774-SIA811DJ-T1-E3 is a P-Channel MOSFET with a Schottky diode (isolated) feature.

  • Maximum Power Dissipation: 1.9W (Ta) and 6.5W (Tc)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 13nC @ 8V
  • Maximum Input Capacitance: 355pF @ 10V
  • Maximum Rds On at Id,Vgs: 94 mOhm @ 2.8A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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