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Same model may have multiple batches, images only for reference.
SIA911ADJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA911ADJ-T1-GE3

Part No SIA911ADJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.5A SC70-6
Datasheet
SIA911ADJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 116 mOhm @ 2.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13nC @ 8V
Max Input Capacitance 345pF @ 10V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 064630-SIA911ADJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA911ADJ-T1-GE3 CAD Model

Description

The Vishay SIA911ADJ-T1-GE3 is a high-performance dual P-channel FET designed for use in a variety of electronic circuits.

  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.5A
  • Package: PowerPAK SC-70-6 Dual package

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2830 $58.0150
500+ $0.2323 $116.1500
775+ $0.2250 $174.3750
1,065+ $0.2178 $231.9570
1,375+ $0.2104 $289.3000
1,840+ $0.1887 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,600 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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