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SIB404DK-T1-GE3

Part No SIB404DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±5V
Power Dissipation (Max) 2.5W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB404
Other Names SIB404DK-T1-GE3CT,SIB404DK-T1-GE3DKR,SIB404DK-T1-GE3,SIB404DK-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277560-SIB404DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB404DK-T1-GE3 CAD Model

Description

The SIB404DK-T1-GE3 power MOSFET is a high-performance N-channel device that belongs to the TrenchFET series from Vishay Siliconix.

  • Category: discrete semiconductor products like transistors, FETs, and MOSFETs
  • Package: PowerPAK SC-75-6 package
  • Drain-Source Voltage: 12 V
  • Continuous Drain Current: 9 A @ 25°C
  • Maximum Rds On: 19mOhm @ 3A and 4.5V
  • Maximum Gate Charge: 15 nC @ 4.5V
  • Maximum Vgs(th): 800mV @ 250μA
  • Power Dissipation: 2.5W (Ta) and 13W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6928 $61.0064
30+ $3.8508 $115.5240
47+ $3.7307 $175.3429
64+ $3.6094 $231.0016
83+ $3.4893 $289.6119
111+ $3.1289 $347.3079
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 117 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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