The SIB417EDK-T1-GE3 is a P-Channel MOSFET (Metal Oxide) transistor from the TrenchFET® series by Vishay Siliconix. It is designed for use in Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single.

• Channel Type: P-Channel
• Series: TrenchFET®
• Application: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Single
• Package: PowerPAK® SC-75-6
• Mounting Type: SMD (SMT)
• Vdss: 8 V
• Id (Continuous Drain Current): 9A (Tc) @ 25°C
• Rds On (Max): 58mOhm @ 5.8A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250μA
• Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
• Qg (Gate Charge) (Max) @ Vgs: 12 nC @ 5 V
• Ciss (Input Capacitance) (Max) @ Vds: 565 pF @ 4 V
• Vgs (Max): ±5V
• Operating Temperature: -55°C to 150°C (TJ)
• Alternative Part: SIB417EDK-T1-GE3
• ECCN: EAR99
• HTSUS: 8541.29.0095