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Same model may have multiple batches, images only for reference.
SIB800EDK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB800EDK-T1-GE3

Part No SIB800EDK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.5A SC75-6
Datasheet
SIB800EDK-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 1.7nC @ 4.5V
Maximum Gate-Source Voltage ±6V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 225 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-75-6L Single
Dimension PowerPAK SC-75-6L
Win Source Part Number 106775-SIB800EDK-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIB800EDK-T1-GE3 CAD Model

Description

The Vishay SIB800EDK-T1-GE3 is an obsolete(EOL) N-Channel MOSFET transistor that features a Schottky diode (isolated) and is manufactured by Vishay.

  • Win Source Part Number: 106775-SIB800EDK-T1-GE3
  • Maximum Power Dissipation: 1.1W (Ta), 3.1W (Tc)
  • Continuous Drain Current: 1.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On @ Id,Vgs: 225 mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SC-75-6L Single

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