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SIB912DK-T1-GE3

Part No SIB912DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.5A SC-75-6 / Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.5A
Rds On (Max) @ Id, Vgs 216mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 10V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-75-6L Dual
Supplier Device Package PowerPAK® SC-75-6L Dual
Base Product Number SIB912
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIB912DKT1GE3,SIB912DK-T1-GE3DKR,SIB912DK-T1-GE3CT,SIB912DK-T1-GE3TR
Standard Package 3,000
Win Source Part Number 973023-SIB912DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB912DK-T1-GE3 CAD Model

Description

The SIB912DK-T1-GE3 is a dual N-channel MOSFET transistor from Vishay Siliconix's TrenchFET® series.

  • Vdss: 20V
  • Id: 1.5A @ 25°C
  • Feature: Logic level gate
  • Rds On: 216mOhm @ 1.8A and 4.5V
  • Package: PowerPAK® SC-75-6L dual
  • Power Rating: 3.1W
  • Qg: 3nC @ 8V
  • Ciss: 95pF @ 10V
  • Vgs(th): 1V @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.2632 $51.3160
12+ $8.4211 $101.0532
19+ $8.1579 $155.0001
26+ $7.8948 $205.2648
33+ $7.6316 $251.8428
44+ $6.8422 $301.0568
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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