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Same model may have multiple batches, images only for reference.
SIDR390DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIDR390DP-T1-GE3

Part No SIDR390DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR390DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 69.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 10180 pF @ 15 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR390
Other Names SIDR390DP-T1-GE3TR,SIDR390DP-GE3,SIDR390DP-T1-GE3DKR,SIDR390DP-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277625-SIDR390DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR390DP-T1-GE3 CAD Model

Description

Vishay Siliconix introduces the SIDR390DP-T1-GE3, a N-channel MOSFET transistor that is part of the TrenchFET Gen IV series.

  • Mounting: SMD (SMT)
  • Package: PowerPAK SO-8
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 69.9A (Ta), 100A (Tc)
  • Low Rds On: 0.8mOhm @ 20A, 10V
  • Maximum Vgs(th): 2V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7650 $52.5350
45+ $2.2687 $102.0915
69+ $2.1978 $151.6482
95+ $2.1269 $202.0555
122+ $2.0560 $250.8320
163+ $1.8433 $300.4579
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Availability: 3,429 pieces
MOQ: 19 pcs
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