The SIDR680DP-T1-GE3 is a trenchFET Gen IV N-channel MOSFET.

• Package: Tape and reel
• Standard Package: 3,000
• Mounting: Surface mount
• Package/Case: PowerPAK SO-8
• Drain to Source Voltage: 80V
• Continuous Drain Current: 32.8A (Ta) and 100A (Tc) @ 25°C
• Rds on (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
• Vgs (Max): ±20V
• Temperature Range: -55°C to 150°C