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Same model may have multiple batches, images only for reference.
SIE830DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE830DF-T1-GE3

Part No SIE830DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE830DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series WFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
Base Product Number SIE830
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277487-SIE830DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE830DF-T1-GE3 CAD Model

Description

The Vishay SIE830DF-T1-GE3 MOSFET is an N-channel component that is part of the WFET® series.

  • Power Dissipation: 5.2W (Ta) and 104W (Tc)
  • Continuous Drain Current @ 25°C: 50A
  • Breakdown Voltage: 30V
  • Maximum Rds On @ 16A and 10V: 4.2mOhm
  • Gate-Source Threshold Voltage @ 250μA: 2V
  • Gate Charge @ 10V: 115nC
  • Package: 10-PolarPAK® (S)
  • Temperature Range: -55°C to 150°C
  • Status: Obsolete

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