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Same model may have multiple batches, images only for reference.
SIE836DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE836DF-T1-E3

Part No SIE836DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (SH)
Package / Case 10-PolarPAK® (SH)
Base Product Number SIE836
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277521-SIE836DF-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIE836DF-T1-E3 CAD Model

Description

The Vishay Siliconix SIE836DF-T1-E3 MOSFET is a N-channel transistor with a maximum drain to source voltage of 200V and a continuous drain current of 18.3A @ 25°C.

  • Maximum On-Resistance: 130mOhm @ 4.1A and 10V gate-source voltage
  • Gate Charge: 41nC @ 10V gate-source voltage
  • Input Capacitance: 1200pF @ 100V drain-source voltage
  • Package: 10-PolarPAK® (SH)
  • Operating Temperature Range: -55°C to 150°C
  • Series: TrenchFET®

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