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SIE860DF-T1-GE3

Part No SIE860DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (M)
Package / Case 10-PolarPAK® (M)
Base Product Number SIE860
Other Names SIE860DFT1GE3,SIE860DF-T1-GE3TR,SIE860DF-T1-GE3DKR,SIE860DF-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277567-SIE860DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE860DF-T1-GE3 CAD Model

Description

The Vishay SIE860DF-T1-GE3 is a N-channel MOSFET transistor.

  • Drain to source voltage (Vdss): 30 V
  • Continuous drain current (Id): 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 21.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
  • Package: 10-PolarPAK® (M)
  • Temperature range: -55°C to 150°C (TJ)
  • Power dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Lead-free: yes
  • Ideal for: use in various applications such as power supplies, motor control, and lighting

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