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SIHA125N60EF-GE3

Part No SIHA125N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220 / N-Channel 600 V 11A (Tc) 179W (Tc) Through Hole TO-220 Full Pack
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1533 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA125
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHA125N60EF-GE3
Standard Package 50
Win Source Part Number 988823-SIHA125N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA125N60EF-GE3 CAD Model

Description

The Vishay Siliconix 988823-SIHA125N60EF-GE3 is a N-Channel MOSFET transistor that belongs to the EF series.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum On-Resistance: 125mOhm @ 12A and 10V
  • Gate Charge: 47nC @ 10V
  • Input Capacitance: 1533pF @ 100Vds
  • Package Type: TO-220-3 Full Pack
  • RoHS Compliant: Yes
  • Temperature Range: -55°C to 150°C
  • Moisture Resistant: Yes
  • Suitable for: Automotive applications
  • AEC-Q200 Rated: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6419 $58.2704
39+ $2.9882 $116.5398
60+ $2.8949 $173.6940
83+ $2.8015 $232.5245
107+ $2.7082 $289.7774
143+ $2.4280 $347.2040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,077 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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