The Vishay SIHA15N60E-E3 is an N-channel MOSFET that offers a drain-source breakdown voltage of 600V and a continuous drain current of 15A @ 25°C.

• Maximum Rds On @ Id, Vgs: 280 mOhm @ 8A and 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 76nC @ 10V
• Maximum Input Capacitance: 1350pF @ 100V
• Applications: various applications, including discrete semiconductor products
• Power Dissipation: 34W (Tc)
• Operating Temperature: -55°C to 150°C (TJ)
• Package: TO-220 Full Pack
• Mounting Type: through hole