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Same model may have multiple batches, images only for reference.
SIHA18N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHA18N60E-E3

Part No SIHA18N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA18N60E-E3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA18
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277740-SIHA18N60E-E3
Ultra Librarian 3D Model Ultra Librarian SIHA18N60E-E3 CAD Model

Description

The Vishay Siliconix SIHA18N60E-E3 N-channel MOSFET is ideal for use in a variety of applications.

  • Maximum Power Dissipation: 34W (Tc)
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 18A (Tc)
  • Maximum Rds On: 202mOhm @ 9A, 10V
  • Mounting: Through-Hole
  • Package: TO-220-3 Full Pack
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge: 92 nC @ 10 V
  • Input Capacitance: 1640 pF @ 100 V

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