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Same model may have multiple batches, images only for reference.
SIHB12N50C-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHB12N50C-E3

Part No SIHB12N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A D2PAK
Datasheet
SIHB12N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1375pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 555 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1096408-SIHB12N50C-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHB12N50C-E3 CAD Model

Description

The Vishay MOSFET with a part number of 1096408-SIHB12N50C-E3 is an N-channel type discrete semiconductor product, which is mounted on the surface with SMD (SMT) technology.

  • Manufacturer: Vishay
  • Part Number: 1096408-SIHB12N50C-E3
  • Channel Type: N-channel
  • Product Type: Discrete Semiconductor
  • Mounting Technology: SMD (SMT)
  • Package Type: D2PAK (TO-263)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 48nC @ 10V
  • Maximum Rds On @ Id,Vgs: 555 mOhm @ 4A, 10V
  • Power Dissipation: 208W (Tc)
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±30V
  • Max Input Capacitance: 1375pF @ 25V
  • Supply and Demand Status: Sufficient

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320+ $1.0880 $348.1600
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