The SIHB12N60ET1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

• Series: E Series
• Packaging: Bulk
• Drain to Source Voltage: 600V
• Power Dissipation: 147W (Tc)
• Mounting Type: Surface Mount
• Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK (TO-263)
• Vgs (Max): ±30V
• Operating Temperature: -55°C to 150°C (TJ)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Continuous Drain Current (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100V