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SIHB20N50E-GE3

Part No SIHB20N50E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB20
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277933-SIHB20N50E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB20N50E-GE3 CAD Model

Description

The SIHB20N50E-GE3 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 19A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 184mOhm @ 10A and 10V
  • Gate Charge (Qg): 92 nC @ 10V
  • Input Capacitance (Ciss): 1640 pF @ 100 Vds
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay Siliconix
  • Base Product Number: SIHB20
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $49.4777 $98.9554
3+ $40.5971 $121.7913
4+ $39.3284 $157.3136
6+ $38.0598 $228.3588
7+ $36.7911 $257.5377
10+ $32.9851 $329.8510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,830 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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