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SIHD3N50D-E3

Part No SIHD3N50D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A DPAK  /  N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
Power Dissipation (Max) 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 75
Win Source Part Number 1146355-SIHD3N50D-E3
Ultra Librarian 3D Model Ultra Librarian SIHD3N50D-E3 CAD Model

Description

The SIHD3N50D-E3 is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum On-Resistance: 3.2 Ohms @ 2.5A and 10V
  • Gate Charge (Qg): 12 nC @ 10V
  • Input Capacitance (Ciss): 175 pF @ 100Vds
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Manufacturer: Vishay Siliconix
  • Application: Automotive

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5425 $59.6750
260+ $0.4451 $115.7260
405+ $0.4313 $174.6765
555+ $0.4174 $231.6570
720+ $0.4035 $290.5200
960+ $0.3617 $347.2320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,450 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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