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SIHD3N50D-GE3

Part No SIHD3N50D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A TO252 DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 175pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 69W (Tc)
Maximum Rds On at Id,Vgs 3.2 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1096413-SIHD3N50D-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHD3N50D-GE3 CAD Model

Description

The Vishay SIHD3N50D-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 69W
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 3A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate-Source Voltage: ±30V
  • Rds On: 3.2 Ohm @ 2.5A, 10V
  • Package: TO-252AA
  • Mounting Type: SMD (SMT)

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