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Same model may have multiple batches, images only for reference.
SIHD6N62E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD6N62E-GE3

Part No SIHD6N62E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 620V 6A TO-252
Datasheet
SIHD6N62E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 578pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1096415-SIHD6N62E-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHD6N62E-GE3 CAD Model

Description

The Vishay SIHD6N62E-GE3 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 620V and a continuous drain current of 6A at 25°C.

  • Drain-Source Breakdown Voltage: 620V
  • Continuous Drain Current: 6A @ 25°C
  • Power Dissipation: 78W
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D-PAK
  • Mounting Type: Surface-Mount
  • Supply and Demand Status: Sufficient
  • Application: Discrete Semiconductor Products

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