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Same model may have multiple batches, images only for reference.
SIHD6N65ET5-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD6N65ET5-GE3

Part No SIHD6N65ET5-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHD6N65ET5-GE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD6
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277766-SIHD6N65ET5-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD6N65ET5-GE3 CAD Model

Description

The SIHD6N65ET5-GE3 MOSFET from Vishay Siliconix is a high-performance N-channel FET that is perfect for use in a wide range of electronic applications.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current Rating: 7A
  • Maximum On-Resistance: 600mOhm @ 3A and 10V
  • Maximum Gate Charge: 48nC @ 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 150°C
  • Ideal For: Power management, automotive, and industrial applications

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