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Same model may have multiple batches, images only for reference.
SIHD9N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD9N60E-GE3

Part No SIHD9N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A DPAK  /  N-Channel 600 V 9A (Tc) 78W (Tc) Surface Mount TO-252AA
Datasheet
SIHD9N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 778 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD9
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHD9N60E-GE3CT-ND,SIHD9N60E-GE3TRINACTIVE,SIHD9N60E-GE3DKR,SIHD9N60E-GE3DKR-ND,SIHD9N60E-GE3DKRINACTIVE,SIHD9N60E-GE3TR,SIHD9N60E-GE3CT,SIHD9N60E-GE3TR-ND
Standard Package 3,000
Win Source Part Number 1211934-SIHD9N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD9N60E-GE3 CAD Model

Description

The SIHD9N60E-GE3 electronic component is a MOSFET transistor manufactured by Vishay Siliconix.

  • Transistor Type: N-Channel MOSFET
  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 9A @ 25°C

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