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SIHF22N60E-E3 Real Image SIHF22N60E-E3 Real Image1 SIHF22N60E-E3 Real Image2 SIHF22N60E-E3 Real Image3
Same model may have multiple batches, images only for reference.
SIHF22N60E-E3 Real Image SIHF22N60E-E3 Real Image1 SIHF22N60E-E3 Real Image2 SIHF22N60E-E3 Real Image3
SIHF22N60E-E3 Real Image SIHF22N60E-E3 Real Image1 SIHF22N60E-E3 Real Image2 SIHF22N60E-E3 Real Image3
Same model may have multiple batches, images only for reference.

SIHF22N60E-E3

Part No SIHF22N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220
Datasheet
SIHF22N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF22
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667073-SIHF22N60E-E3
Ultra Librarian 3D Model Ultra Librarian SIHF22N60E-E3 CAD Model

Description

The SIHF22N60E-E3 is an N-channel MOSFET transistor from Vishay.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 21A @ 25°C
  • Maximum On-Resistance (Rds On): 180mOhm @ 11A and 10V gate-source voltage (Vgs)
  • Threshold Voltage (Vgs(th)): 4V @ a drain current (Id) of 250µA
  • Package: TO-220-3 full pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5107 $50.2140
49+ $2.0600 $100.9400
76+ $1.9957 $151.6732
104+ $1.9313 $200.8552
134+ $1.8669 $250.1646
180+ $1.6738 $301.2840
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Availability: 2,617 pieces
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