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Same model may have multiple batches, images only for reference.
SIHF840LCS-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHF840LCS-GE3

Part No SIHF840LCS-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHF840LCS-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF840
Other Names 742-SIHF840LCS-GE3TR
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277912-SIHF840LCS-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF840LCS-GE3 CAD Model

Description

The SIHF840LCS-GE3 from Vishay Siliconix is an N-channel MOSFET transistor with a drain to source voltage of 500V and a current of 8A (Tc) @ 25°C.

  • Maximum Rds On: 850mOhm @ 4.8A, 10V
  • Maximum Gate Charge: 39 nC @ 10 V
  • Input Capacitance: 1100 pF @ 25 V
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 3.1W (Ta) or 125W (Tc)
  • Gate-Source Voltage: ±30V
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD (SMT) technology
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99 compliant

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