The SIHFB11N50A-E3 is a high-voltage N-channel MOSFET from Vishay Siliconix, designed for demanding power switching applications. This MOSFET leverages advanced technology to deliver low on-resistance, fast switching speeds, and excellent avalanche ruggedness, making it suitable for use in power supplies, motor drives, and other high-power systems.

Applications

• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Motor control circuits
• Lighting ballasts
• Power factor correction (PFC)

Features

• Single N-Channel MOSFET
• 500 V Drain-Source Voltage (VDS)
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Avalanche Energy Rated
• TO-220AB Package

Benefits

• High Efficiency: Low RDS(on) minimizes conduction losses, resulting in higher system efficiency.
• Robust Performance: Avalanche rating ensures the device can handle transient voltage spikes, enhancing reliability.
• Simplified Design: High voltage capability reduces the need for complex voltage clamping.
• Fast Switching: Fast switching speeds minimize switching losses and improve transient response.
• Easy to Mount: The industry-standard TO-220AB package simplifies mounting and heat sinking.

Additional Details

The SIHFB11N50A-E3 features a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 11A. Its RDS(on) is typically 0.47 ohms at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. The device is packaged in a TO-220AB through-hole package, providing effective heat dissipation. Refer to the Vishay datasheet for complete specifications and application notes.