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Same model may have multiple batches, images only for reference.
SIHFBE30S-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFBE30S-GE3

Part No SIHFBE30S-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 800V  /  N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
SIHFBE30S-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFBE30S-GE3CT,742-SIHFBE30S-GE3DKR,742-SIHFBE30S-GE3TR
Standard Package 1,000
Win Source Part Number 1216371-SIHFBE30S-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFBE30S-GE3 CAD Model

Description

The SIHFBE30S-GE3 MOSFET from Vishay Siliconix is an N-channel FET with a maximum drain to source voltage of 800V and a continuous drain current of 4.1A @ 25°C.

  • Maximum Drain to Source Voltage: 800V
  • Continuous Drain Current: 4.1A @ 25°C
  • Rds On: 3Ohm @ 2.5A and 10V
  • Gate Charge: 78 nC @ 10V
  • Input Capacitance: 1300 pF @ 25V
  • Category: Transistors - FETs, MOSFETs - Single
  • Package: D2PAK (TO-263)

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200+ $1.2783 $255.6600
265+ $1.1460 $303.6900
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