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Same model may have multiple batches, images only for reference.
SIHFR9120-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHFR9120-GE3

Part No SIHFR9120-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFR9120-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR9120
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277859-SIHFR9120-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR9120-GE3 CAD Model

Description

The Vishay Siliconix SIHFR9120-GE3 is a P-channel MOSFET used in discrete semiconductor products.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 5.6A @ 25°C
  • Maximum Rds On: 600mOhm @ 3.4A and 10V gate-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 390pF @ 25V
  • Gate Charge: 18nC @ 10V
  • Power Dissipation: 2.5W (Ta) and 42W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63

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