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Same model may have multiple batches, images only for reference.
IPI086N10N3G Real Image
Same model may have multiple batches, images only for reference.

IPI086N10N3G

Part No IPI086N10N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO262-3
Datasheet
IPI086N10N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 75μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3980pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 8.6 mOhm @ 73A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069011-IPI086N10N3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI086N10N3G CAD Model

Description

The Infineon Technologies IPI086N10N3G MOSFET is a high-popularity N-Channel transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 80A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 80A
  • Maximum Rds On @ Id,Vgs: 8.6 mOhm @ 73A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 75μA
  • Power Dissipation: 125W (Tc)
  • Package: PG-TO262-3

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194+ $1.5523 $301.1462
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