The SI2336DS-T1-GE3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Semiconductors. It's designed for low-voltage, high-side load switching applications. The device features low on-resistance (RDS(on)) and is optimized for efficient power management in portable devices and other space-constrained applications.

Applications

• Load Switching
• Power Management
• Battery Management
• DC-DC Conversion
• Portable Devices (Smartphones, Tablets)

Features

• P-Channel MOSFET: Designed for high-side switching.
• Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
• Low Threshold Voltage (VGS(th)): Allows for operation with low gate drive voltages.
• Surface Mount Package: SOT-23 package for compact designs.
• Halogen-Free: Environmentally friendly.
• Operating Voltage: -20V

Benefits

• Improved Efficiency: Low RDS(on) minimizes power dissipation.
• Extended Battery Life: Efficient power management extends battery life in portable devices.
• Simplified Circuit Design: P-channel configuration simplifies high-side switching.
• Compact Solution: Small SOT-23 package saves board space.

The SI2336DS-T1-GE3 features a maximum drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -3.9A. The RDS(on) is typically 65 mΩ at VGS = -4.5V. Its low gate charge and fast switching speed make it suitable for high-frequency switching applications. The SOT-23 package allows for easy surface mounting and integration into compact electronic designs.