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Same model may have multiple batches, images only for reference.
SIHG22N60AE-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG22N60AE-GE3

Part No SIHG22N60AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG22N60AE-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1451 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG22
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277751-SIHG22N60AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG22N60AE-GE3 CAD Model

Description

The Vishay SIHG22N60AE-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 600V and a continuous drain current of 20A (Tc).

  • Maximum On-State Resistance: 180mOhm @ 11A and 10V gate-source voltage
  • Gate Charge: 96nC @ 10V
  • Input Capacitance: 1451pF @ 100V drain-source voltage
  • Package: TO-247-3
  • Mounting: Through-hole mounting
  • Temperature Range: -55°C to 150°C

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