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SIHG22N60EF-GE3

Name: SIHG22N60EF-GE3
Brand: Vishay
SKU: 1011110
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SIHG22N60EF-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 19A TO247AC / N-Channel 600 V 19A (Tc) 179W (Tc) Through Hole TO-247AC
Datasheet	SIHG22N60EF-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	EF
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1423 pF @ 100 V
Power Dissipation (Max)	179W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG22
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	1011110-SIHG22N60EF-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHG22N60EF-GE3 CAD Model

Alternative Products

Description

The SIHG22N60EF-GE3 is an N-channel MOSFET transistor from Vishay Siliconix. SIHG22N60EF-GE3 is manufactured by Vishay Siliconix.

Channel Type: N-channel
Package: TO-247-3
Supplier Device Package: TO-247AC
Drain to Source Voltage (Max): 600 V
Continuous Drain Current: 19A (Tc)
On-Resistance: 182mOhm @ 11A, 10V
Gate Charge: 96 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
ECCN: EAR99
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095

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