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Same model may have multiple batches, images only for reference.
SIHG22N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG22N60EF-GE3

Part No SIHG22N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 19A TO247AC / N-Channel 600 V 19A (Tc) 179W (Tc) Through Hole TO-247AC
Datasheet
SIHG22N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1423 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG22
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1011110-SIHG22N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG22N60EF-GE3 CAD Model

Description

The SIHG22N60EF-GE3 is an N-channel MOSFET transistor from Vishay Siliconix. SIHG22N60EF-GE3 is manufactured by Vishay Siliconix.

  • Channel Type: N-channel
  • Package: TO-247-3
  • Supplier Device Package: TO-247AC
  • Drain to Source Voltage (Max): 600 V
  • Continuous Drain Current: 19A (Tc)
  • On-Resistance: 182mOhm @ 11A, 10V
  • Gate Charge: 96 nC @ 10 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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