The SIHG33N65E-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

• Manufacturer: Vishay Siliconix
• FET Type: N-Channel
• Packaging: Tube
• Standard Package Quantity: 500
• Drain to Source Voltage: 650 V
• Continuous Drain Current: 32.4A (Tc)
• Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation: 313W (Tc)
• Mounting Type: Through-Hole
• Package/Case: TO-247-3
• Supplier Device Package: TO-247AC
• Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 100 V
• Vgs (Max): ±30V
• Temperature Range: -55°C to 150°C (TJ)
• HTSUS Code: 8541.29.0095