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Same model may have multiple batches, images only for reference.
SIHG460B-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG460B-GE3

Part No SIHG460B-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG460B-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3094 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG460
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277889-SIHG460B-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG460B-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is an N-Channel transistor designed for use in electronic circuits.

  • Drain to Source Voltage: 500 V
  • Continuous Drain Current: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation: 278W (Tc)
  • Packaging: TO-247-3
  • Standard Package: 500
  • ECCN: EAR99
  • HTSUS Classification: 8541.29.0095

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