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SIHG70N60EF-GE3

Part No SIHG70N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 70A TO247AC
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG70
Standard Package 25 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 749229-SIHG70N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG70N60EF-GE3 CAD Model

Description

The 749229-SIHG70N60EF-GE3 is a single N-channel MOSFET transistor manufactured by Vishay.

  • Category: Discrete semiconductor products
  • Series: Vishay
  • Package: Tube
  • Standard Package: 25 pieces
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (Max): 520W
  • Mounting Type: Through-hole
  • Package/Case: TO-247-3
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3855 $65.6985
15+ $7.7004 $115.5060
24+ $7.4601 $179.0424
32+ $7.2199 $231.0368
42+ $6.9785 $293.0970
56+ $6.2566 $350.3696
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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