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SIHG73N60AEL-GE3

Part No SIHG73N60AEL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EL
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 36.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 342 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6709 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG73
Other Names SIHG73N60AEL-GE3DKR,SIHG73N60AEL-GE3DKRINACTIVE,SIHG73N60AEL-GE3CT,SIHG73N60AEL-GE3TR,SIHG73N60AEL-GE3DKR,SIHG73N60AEL-GE3TRINACTIVE,SIHG73N60AEL-GE3CT,SIHG73N60AEL-GE3TR
Standard Package 25
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277705-SIHG73N60AEL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG73N60AEL-GE3 CAD Model

Description

The SIHG73N60AEL-GE3 from Vishay Siliconix is a N-Channel MOSFET transistor available @ Win Source.

  • Package: Tube
  • Standard Package Quantity: 25
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 69A (Tc) @ 25°C
  • Rds On (Max): 42mOhm @ 36.5A, 10V
  • Vgs(th) (Max): 4V @ 250μA
  • Power Dissipation (Max): 520W (Tc)
  • Mounting: Through hole technology
  • Operating Temperature Range: -55°C to 150°C (TJ)

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