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Same model may have multiple batches, images only for reference.
SIHG73N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHG73N60E-E3

Part No SIHG73N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG73N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 362 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG73
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277877-SIHG73N60E-E3
Ultra Librarian 3D Model Ultra Librarian SIHG73N60E-E3 CAD Model

Description

The Vishay Siliconix MOSFET is a high-performance N-channel transistor.

  • Maximum Drain to Source Voltage: 600 V
  • Continuous Drain Current: 73 A @ 25°C
  • On-Resistance: 39 mOhm @ 36 A and 10 V gate to source voltage
  • Maximum Gate-Source Voltage: +/- 30V
  • RoHS Compliant: Yes
  • Power Dissipation: 520 W @ Tc
  • Mounting Type: Through-Hole
  • Package: TO-247-3

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Quantity Unit Price Ext. Price
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28+ $4.2241 $118.2748
43+ $4.0921 $175.9603
59+ $3.9600 $233.6400
76+ $3.8281 $290.9356
101+ $3.4320 $346.6320
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Availability: 200 pieces
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