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Same model may have multiple batches, images only for reference.
SIHG80N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG80N60E-GE3

Part No SIHG80N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 80A TO247AC / Trans MOSFET N-CH 600V 80A 3-Pin(3+Tab) TO-247AC
Datasheet
SIHG80N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 443nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6900pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 520W (Tc)
Rds On (Maximum) @ Id, Vgs 30 mOhm @ 40A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AC
Package TO-247-3
Win Source Part Number 774965-SIHG80N60E-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SiHG80N60E
ECCN EAR99
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SIHG80N60E-GE3 CAD Model

Description

The Vishay Siliconix SIHG80N60E-GE3 is a MOSFET technology-based electronic component from Vishay Siliconix.

  • Package: TO-247-3
  • Mounting Style: Through-hole
  • Family Name: SiHG80N60E
  • Maximum Drain Source Voltage: 600V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 520W (Tc)
  • Maximum Rds On: 30 mOhm @ 40A, 10V
  • Supply and Demand Status: Limited

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