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SIHH20N50E-T1-GE3

Part No SIHH20N50E-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 147mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2063 pF @ 100 V
Power Dissipation (Max) 174W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Base Product Number SIHH20
Other Names SIHH20N50E-T1-GE3CT,SIHH20N50E-T1-GE3CT,SIHH20N50E-T1-GE3DKRINACTIVE,SIHH20N50E-T1-GE3TRINACTIVE,SIHH20N50E-T1-GE3TR,SIHH20N50E-T1-GE3DKR,SIHH20N50E-T1-GE3DKR,SIHH20N50E-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277762-SIHH20N50E-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHH20N50E-T1-GE3 CAD Model

Description

The SIHH20N50E-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 22A @ 25°C
  • Maximum On-Resistance: 147mOhm @ 10A and 10V gate-source voltage
  • Gate Charge: 84nC @ 10V
  • Input Capacitance: 2063pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C to 150°C
  • Package: 8-PowerTDFN package

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