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Same model may have multiple batches, images only for reference.
SIHJ8N60E-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHJ8N60E-T1-GE3

Part No SIHJ8N60E-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHJ8N60E-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 754 pF @ 100 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIHJ8
Other Names SIHJ8N60E-T1-GE3CT,SIHJ8N60E-T1-GE3TR,SIHJ8N60E-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277930-SIHJ8N60E-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHJ8N60E-T1-GE3 CAD Model

Description

The SIHJ8N60E-T1-GE3 is an N-Channel MOSFET (Metal Oxide) transistor that can handle a continuous drain current of 8A (Tc) @ 25°C and a drain to source voltage of 600V.

  • Maximum Rds On: 520mOhm @ 4A, 10V
  • Maximum Gate Charge: 44 nC @ 10Vgs
  • Package: PowerPAK® SO-8
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 89W (Tc)
  • Ideal For: Discrete Semiconductor Products, specifically in Transistors - FETs, MOSFETs - Single

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